FQPF2N60C FQPF2N60 2N60 N Channel Transistor MOSFET 2A 600V TO-220F Original Package

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Shenzhen Canyi Technology Co., Ltd.

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FQPF2N60C FQPF2N60 2N60 N Channel Transistor MOSFET 2A 600V TO-220F Original Package

Name: FQPF2N60C FQPF2N60 2N60 N Channel Transistor MOSFET 2A 600V TO220F Original Package
Brand: Canyi
Price: 0.1 USD

Buy cheap FQPF2N60C FQPF2N60 2N60 N Channel Transistor MOSFET 2A 600V TO-220F Original Package product

Brand Name : Canyi

Model Number : FQPF2N60C

Certification : RoHS

Place of Origin : Guangdong, China

MOQ : 1000PCS

Price : US$ 0.1-0.19 per unit (Pieces)

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability : 1000,000,000PCS Per Day

Delivery Time : 3-5 days

Packaging Details : Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms

Name : 2N60 MOSFET transistor

Package Type : Throught Hole

Material : Silicon

Type : Field-Effect Transistor

Package : TO-220F

VDSS : 600V

Storage Temperature : -55 - +150(℃)

ID : 1.6A

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FQPF2N60C FQPF2N60 2N60 MOSFET 2A 600V field effect transistor TO-220F MOS FET N-Channel transistor Original Package

Features:

1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
Low gate charge ( typical 9.0 nC)
Low Crss ( typical 5.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capabilit

General Description:

These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Absolute Maximum Ratings (Tc=25°C)

Symbol	Parameters	FQPF2N60	Unit
V_DSS	Drain-Source Voltage	600	V
V_GS	Gate-Source Voltage-Continuous	±30	V
I_D	Drain Current-Continuous(Note 2)	1.6	A
I_DM	Drain Current-Single Plused(Note 1)	6.4	A
P_D	Power Dissipation (Note 2)	28	W
T_j	Max.Operating junction temperature	-55~150	℃

Electrical characteristics (Tc=25°C unless otherwise noted)

Symbol		Parameters		Min	Typ	Max	Units	Conditions
Static Characteristics
B_VDSS		Drain-Source Breakdown VoltageCurrent (Note 1)		600	--	--	V	I_D=250µA,V_GS=0V,T_J=25°C
V_GS(th)		Gate Threshold Voltage		3.0	--	5.0	V	V_DS=V_GS,I_D=250μA
R_DS(on)		Drain-Source On-Resistance		--	20	25	mΩ	V_GS=10V,I_D=25A
I_GSS		Gate-Body Leakage Current		--	--	±100	nA	V_GS=±20V,V_DS=0
I_DSS		Zero Gate Voltage Drain Current		--	--	1	μA	V_DS=60V,V_GS=0
gfs		Forward Transconductance		--	2.0	--	S	V_D_S=30V,I_D=25A
Switching Characteristics
T_d(on)		Turn-On Delay Time	--		10	30	ns	V_DS=30V,I_D=25A, R_G=50Ω(Note 2)
T_r		Rise Time	--		185	--	ns
T_d(_off₎		Turn-Off Delay Time	--		20	50	ns
T_f		Fall Time	--		25	60	ns
Q_g		Total Gate Charge	--		39	--	nC	V_DS=48V,V_GS=10V, I_D=50A(Note 2)
Q_gs		Gate-Source Charge	--		9	11	nC
Q_gd		Gate-Drain Charge	--		4.3	--	nC
Dynamic Characteristics
C_iss	Input Capacitance		--		270	350	pF	V_DS=25V,V_GS=0, f=1MHz
C_oss	Output Capacitance		--		40	50	pF
C_rss	Reverse Transfer Capacitance		--		5	7	pF
I_S	Continuous Drain-Source Diode Forward Current(Note 2)		--		--	1.6	A
V_SD	Diode Forward On-Voltage		--		--	1.4	V	I_S=20A,V_GS=0

Our Company

Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.

Our Advantage:
1. Electronic component specialist and professional.
2. Strong R & D team, experienced research staffs
3. Strong and consistent quality control, same standard as of RoHS.
4. Elite sales team with more than 5 years international trading experience individually.
5. Strong technical support to help customers choose the most appropriate products.
6. Be proud of the product and the competitive price.

Product Tags:

mosfet power transistor

high power transistor

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